2.0 0.15 4.5 0.15 3.5 0.2 2.3 0.15 1.25 0. 2 0.203max 0.2 0.05 5. 3 0 . 2 smb gr-1089 core first level 2/10 10/1000 2/10 10/1000 500 100 12 10 gr-1089 core second level 2/10 2/10 500 24 gr-1089 core intra-building 2/10 2/10 100 0 itu-t-k20/k21 10/700 5/310 150 37.5 53 0 itu-t-k20 (iec61000-4-2) 1/60 ns 0 0 vde0433 0 5/310 100 50 21.5 0 vde0878 1.2/50 1/20 100 50 0 0 iec-1000-4-5 10/700 1.2/50 5/310 8/20 100 100 21.5 0 fccpart68,lightning surgetypea 10/160 10/560 10/160 10/560 200 100 12.5 6.5 fccpart68,lightning surgetypeb 9/720 5/320 25 0 features esd contact discharge esd air discharge 6000 1500 6000 8000 4000 2000 1500 800 1000 4000 2000 4000 4000 comp lies with the following standards: 2500 1000 peak surge voltage (v) 1500 necessary resistor ( ) sm tpaxxx galaxy electrical holding current: i h =150ma min repetitive peak pulse current: th e smtpaxxx s e ri e s h a s b e e n d e s i gned to protect transient induced by ac power lines.the package/die bidirectional crowbar protection size ratio has been optimized by using the smb package. low leakage current: i r =2 a m ax schematic diagram breakdown voltage: 62 --- 270 v peak pulse power: 5000 w 5000 voltage range from 62v to 270v low capacitance from 15pf to 30pf typ.@50v voltage waveform ( s) current waveform ( s) required peak current (a) telecommunication protection description i pp =50a,10 / 1000 s. telecommunication equipment against lightning and bl galaxy electrical document number 0286002 1. www.galaxycn.com bl dimensions in millimeters
v i i pp i h i rm i bo v rm v br v bo i r 10/1000 s50 8/20 s 100 10/560 s55 5/310 s65 10/160 s75 1/20 s 100 2/10 s 150 8/20 s2.5 ka t=20m s 30 t=16.6m s 32 t=0.2s 17 t=2s 9 t=16.6m s 8.5 t=20m s 9 -55to+150 150 260 symbol value unlt r th (j-l) 20 /w r th (j-a) 100 /w i h c c min. note3 typ. note4 typ. note5 a v ma v v ma v ma ma pf pf 56 62 85 82 150 30 50 61 68 93 90 150 30 45 90 100 135 133 150 2 0 40 108 120 160 160 150 20 40 117 130 173 173 150 20 35 162 180 235 240 150 15 30 180 200 262 267 150 15 30 198 22 0 285 293 150 15 30 216 24 0 300 320 150 15 30 243 27 0 350 360 150 15 30 symbol v rm i rm v r v br v bo i h i bo i pp c n o t e 4 : v r = 50v bi as, v rms = 1v , f = 1mh z. n o t e 5 : v r = 2v bi as, v rms = 1v , f = 1mh z. 2 1.0 800 800 smtpa68 t68 SMTPA100 t100 smtpa120 t12 0 smtpa130 t13 0 smtpa180 t18 0 a thermal resistances t l storage temperature range maximum junction temperature ipp repetitive peak pulse current static v bo @ i bo max. note2 parameter junction to leads junction to ambient with recommended footprint dynamic v bo @ i bo max. note1 absolute maximum ratings (t a =25 ) parameter symbol unit value a i fsm i fs t stg t j storage temperature range maximum junction temperature fail safe mode: maximum current non repetitive surge peak on-state current (sinusoidal) i 2 t i 2 t vallue for fusing a 2 s i r @ v r max. smtpa200 t2 00 smtpa220 t22 0 smtpa62 t62 type i rm @ v rm max. smtpa240 t24 0 smtpa270 t27 0 electrical characteristics (t a =25 ) leakage current at stand-off voltage capacitance parameter stand-off voltage sm tpaxxx galaxy electrical n o t e : s ee f unc ti ona l b rea k over vo lt age t es t c i rcu it 1 . note2: see test circuit2. note3: see functional holding curre nt test circuit 3. break over voltage holding current break over current peak pulse current continuous reverse voltage breakdown voltage bl galaxy electrical document number 0286002 2. www.galaxycn.com bl 1 device marking code
vout 1/4 220v 50hz 140 r1 r2 240 d.u.t tp=20ms k i bo measurement v bo measurement u 10 | f 2 |? 45 |? 83 |? 66 |? 47 |? 0.36nf 46 | h key tek 'system 2' generator with pn2461 module u 60 | f 250 |? 47 |? 12 |? 46 | h key tek 'system 2' generator with pn2461 module 26 | h ratings and characteristic curves smt paxxx test procedure : pulse test duration (tp = 20ms): - for bidirectional devices = sw itch k is closed - for unidirectional devices = sw itch k is open. v out selection - device w ith v bo < 200 volt - v out = 250 v rms , r1 = 140
. - device w ith v bo 200 volt - v out = 480 v rms , r2 = 240
. test circuit 1 for dynamic i bo and v bo parameters: test circuit 2 for i bo and v bo parameters: 100v/
d.u.t. r v bat =-48v surge generator min . max. min . max. a1 1.9 2.45 0.075 0.096 a2 0.05 0.2 0.002 0.008 b 1.95 2.2 0.077 0.087 c 0.15 0.41 0.006 0.016 e 5.1 5.6 0.201 0.22 e1 4.05 4.6 0.159 0.181 d 3.3 3.95 0.13 0.156 l 0.75 1.6 0.03 0.063 smt paxxx ratings and characteristic curves test circuit 3 for i h parameters: foot print in millimeters (inches) this is a go-no go test w hich allow s to confirm the holding current (i h ) level in a functional test circuit. testprocedure : 1) adjust the current level at the ih value by short circuiting the ak of the d.u.t. 2) fire the d.u.t w ith a surge current : ipp = 10a , 10/1000 ms. 3) the d.u.t w ill come back of f -state w ithin 50ms max. package mechanical data smb(jedec do-214aa) ref. dimensions millimeters inches bl galaxy electrical document number 0286002 4. www.galaxycn.com e1 d e c l b a1 a2 1.52(0.059) 2.75(0.108) 1.52(0.059) 2.3(0.09)
sm tpa xx surface mount voltage trisil protection: tm ipp=50a ratings and characteristic curves p art number marking package weight base qty delivery mode smtpa62 u01 smtpa68 u05 SMTPA100 u13 smtpa120 u17 smtpa130 u19 smtpa180 u25 smtpa200 u27 smtpa220 u31 smtpa240 u35 smtpa270 u39 fig.1 -- non repetitive surge peak on-state fig.2 -- on-state voltage versus on-state current versus overload duration current (typical values). order code s m t p axxx smb 0.11g 5000 tape & reel ordering information bl galaxy electrical document number 0286002 5. www.galaxycn.com 0 1e+3 1e-2 1e-1 1e+0 1e+1 1e+2 t(s) 5 10 15 20 25 30 35 40 f=50hz itsm(a) 1 1 vt(v) 23 45 8 7 6910 2 10 5 50 20 it(a)
ratings and characteristic curves s m t p axxx fig.3 -- relative variation of holding current versus junction temperature fig.4 -- relative variation of breakover voltage versus junction temperature ffff fig.5 -- relative variation of leakage current versus junction temperature (typical values). fig.6 -- relative variation of thermal impedance versus pulse duration fig.7 -- relative variation of junction capacitance versus reverse voltage applied (typical values) bl galaxy electrical www.galaxycn.com document number 0286002 6. 2000 10 100 25 t j ( ) 1 1000 50 100 75 125 i rm [t j ]/i rm [t j =25 ] v r =v rm 0.8 0.6 0.2 0.4 0.0 -40 -20 20 060 40 80 100 1.0 1.2 1.4 2.0 1.6 1.8 t j ( ?? c) 120 1.5 1 0 1 100 10 v r (v) .5 300 f=1mh z 2 5 22050 2.5 c[v r ]/c[v r =50v] 1.02 1 .96 .98 .94 -40 -20 20 0120 40 60 80 100 1.04 1.08 1.06 t j ( ) 1e+1 1e-1 1e-3 1e-2 1e-1 1e+0 1e+1 1e+2 1e+0 1e+2 tp(s) 5e+2 z th(j-a) ( /w)
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